Effect of number of fins on input impedance in MIGFET using TCAD simulations

This work analyses the effects of the number of fins and fin structure on the device input impedance (both real part and imaginary part) of multifin double gate fin field effect transistors (DG-FinFET). In order to have fair comparison, when the number of fins increases, the fin height is reduced to have the same drive current (ION). The real part of the input impedance remains unchanged with increase in number of fins, whereas the imaginary part decreases with the number of fins. An empirical model is developed for imaginary part of input impedance in terms of number of fins. Simulation results obtained from TCAD simulator matches well with the model developed.