M. Fiederle, A. Fauler, V. Babentsov, J. Franc, J. Ludwig, K. Benz
{"title":"垂直布里奇曼法生长CdTe晶体的表征","authors":"M. Fiederle, A. Fauler, V. Babentsov, J. Franc, J. Ludwig, K. Benz","doi":"10.1109/NSSMIC.2001.1009281","DOIUrl":null,"url":null,"abstract":"CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity. The effort of the improvements could be demonstrated by reduction of twins and the growth of large single crystalline grains up to 40/spl times/40 mm/sup 2/. Different dopants had been applied to obtain resistivities of 5/spl times/10/sup 8/ Ohmcm up to 2/spl times/10/sup 10/ Ohmcm.","PeriodicalId":159123,"journal":{"name":"2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Characterization of CdTe crystals grown by the Vertical Bridgman method\",\"authors\":\"M. Fiederle, A. Fauler, V. Babentsov, J. Franc, J. Ludwig, K. Benz\",\"doi\":\"10.1109/NSSMIC.2001.1009281\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity. The effort of the improvements could be demonstrated by reduction of twins and the growth of large single crystalline grains up to 40/spl times/40 mm/sup 2/. Different dopants had been applied to obtain resistivities of 5/spl times/10/sup 8/ Ohmcm up to 2/spl times/10/sup 10/ Ohmcm.\",\"PeriodicalId\":159123,\"journal\":{\"name\":\"2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.2001.1009281\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2001.1009281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of CdTe crystals grown by the Vertical Bridgman method
CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity. The effort of the improvements could be demonstrated by reduction of twins and the growth of large single crystalline grains up to 40/spl times/40 mm/sup 2/. Different dopants had been applied to obtain resistivities of 5/spl times/10/sup 8/ Ohmcm up to 2/spl times/10/sup 10/ Ohmcm.
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