{"title":"确定直接动力注入(DPI)过程中导致功能故障的电气机构的新方法","authors":"K. Abouda, P. Besse, T. Laplagne","doi":"10.1109/APEMC.2012.6238003","DOIUrl":null,"url":null,"abstract":"In particular applications, integrated circuits (ICs) have to be designed to guarantee safe operations during severe electromagnetic aggressions stresses such as Direct Power Injection (DPI). Unfortunately, the simulation of functional failures during DPI events remains very challenging for analogue products due the large frequency domain and to the lack of models for internal parasitic coupling. This paper describes a test method to identify the design functions and the physical mechanisms that lead to functional failures when integrated circuits are submitted to EMC stress.","PeriodicalId":300639,"journal":{"name":"2012 Asia-Pacific Symposium on Electromagnetic Compatibility","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Novel method To identify electrical mechanisms responsible for functional failures during Direct Power Injection “DPI”\",\"authors\":\"K. Abouda, P. Besse, T. Laplagne\",\"doi\":\"10.1109/APEMC.2012.6238003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In particular applications, integrated circuits (ICs) have to be designed to guarantee safe operations during severe electromagnetic aggressions stresses such as Direct Power Injection (DPI). Unfortunately, the simulation of functional failures during DPI events remains very challenging for analogue products due the large frequency domain and to the lack of models for internal parasitic coupling. This paper describes a test method to identify the design functions and the physical mechanisms that lead to functional failures when integrated circuits are submitted to EMC stress.\",\"PeriodicalId\":300639,\"journal\":{\"name\":\"2012 Asia-Pacific Symposium on Electromagnetic Compatibility\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Asia-Pacific Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEMC.2012.6238003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Asia-Pacific Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEMC.2012.6238003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel method To identify electrical mechanisms responsible for functional failures during Direct Power Injection “DPI”
In particular applications, integrated circuits (ICs) have to be designed to guarantee safe operations during severe electromagnetic aggressions stresses such as Direct Power Injection (DPI). Unfortunately, the simulation of functional failures during DPI events remains very challenging for analogue products due the large frequency domain and to the lack of models for internal parasitic coupling. This paper describes a test method to identify the design functions and the physical mechanisms that lead to functional failures when integrated circuits are submitted to EMC stress.