Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider
{"title":"超低功耗自偏置电流基准","authors":"Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider","doi":"10.1145/1016568.1016611","DOIUrl":null,"url":null,"abstract":"This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.","PeriodicalId":275811,"journal":{"name":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An ultra-low-power self-biased current reference\",\"authors\":\"Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider\",\"doi\":\"10.1145/1016568.1016611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.\",\"PeriodicalId\":275811,\"journal\":{\"name\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1016568.1016611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1016568.1016611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.