超低功耗自偏置电流基准

Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider
{"title":"超低功耗自偏置电流基准","authors":"Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider","doi":"10.1145/1016568.1016611","DOIUrl":null,"url":null,"abstract":"This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.","PeriodicalId":275811,"journal":{"name":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An ultra-low-power self-biased current reference\",\"authors\":\"Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider\",\"doi\":\"10.1145/1016568.1016611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.\",\"PeriodicalId\":275811,\"journal\":{\"name\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1016568.1016611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1016568.1016611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

本文介绍了一种超低功耗自偏置400pa电流源的设计。有效的设计方法使得AMIS 1.5 /spl mu/m(台积电0.35 /spl mu/m) CMOS技术的单元面积约为0.045 mm/sup 2/ (0.027 mm/sup 2/),功耗约为2 nW, 1.2 V电源。仿真和实验结果验证了该设计,并表明电流源可以在低至1.1 V的电源电压下工作,并且具有良好的稳节性(在0.35 /spl mu/m的技术中,电源电压变化<4%/V)。这种电流源适用于非常低功耗的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
An ultra-low-power self-biased current reference
This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A formal software synthesis approach for embedded hard real-time systems FPGA implementation of parallel turbo-decoders Leakage power optimization in standard-cell designs A switch architecture and signal synchronization for GALS system-on-chips Accurate software performance estimation using domain classification and neural networks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1