通过深入的电路分析和微探针对台架试验结果进行评估,解决发射部位无效的故障

Carlo M. Casabuena, E. J. de La Cruz
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引用次数: 0

摘要

失效分析在包括半导体制造在内的许多工业分支中都是一门非常重要的学科,它被用于新产品的设计调试或现有产品的良率改进。光子发射显微镜是一种广泛应用于故障分析的故障定位技术,例如在功能故障设备上,故障模式只能从台架测试中复制。然而,发射显微镜的故障定位并不总是在缺陷位置检测到发射点。在许多情况下,可以观察到诱导发射点。因此,需要通过台架试验评估结果、电路分析和微探测的深入关联来进一步进行故障隔离。本文提出了一个案例研究,展示了这些技术的使用。
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Resolving Failures with Invalid Emission Site Through Bench Tests Results Evaluation with in-depth Circuit Analysis and Micro-probing
Failure analysis is a very important discipline in many branches of industry, including semiconductor manufacturing, where it is used in design debug of new products or in yield improvement of existing products. Photon emission microscopy is a widely used fault localization technique in failure analysis, such as on a functional failure device, where the failure mode can only be replicated from bench testing. However, fault localization by emission microscopy does not always detect an emission site at the defect location. In many cases, induced emission spots are observed. Thus, further failure isolation through in-depth correlation of bench test evaluation results, circuit analysis and micro-probing is needed. This paper presents a case study demonstrating the use of these techniques.
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