L. Sirleto, M. Ferrara, L. Moretti, I. Rendina, A. Rossi, E. Santamato, B. Jalali
{"title":"多孔硅在1.5微米处的拉曼发射:一种可能的方法","authors":"L. Sirleto, M. Ferrara, L. Moretti, I. Rendina, A. Rossi, E. Santamato, B. Jalali","doi":"10.1109/WFOPC.2005.1462108","DOIUrl":null,"url":null,"abstract":"In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported. Finally, we discuss about the possibility to enhance the Raman gain coefficient and to eliminate two photon absorption in porous silicon.","PeriodicalId":445290,"journal":{"name":"Proceedings of 2005 IEEE/LEOS Workshop on Fibres and Optical Passive Components, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Raman emission in porous silicon at 1.5 micron: a possible approach\",\"authors\":\"L. Sirleto, M. Ferrara, L. Moretti, I. Rendina, A. Rossi, E. Santamato, B. Jalali\",\"doi\":\"10.1109/WFOPC.2005.1462108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported. Finally, we discuss about the possibility to enhance the Raman gain coefficient and to eliminate two photon absorption in porous silicon.\",\"PeriodicalId\":445290,\"journal\":{\"name\":\"Proceedings of 2005 IEEE/LEOS Workshop on Fibres and Optical Passive Components, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 2005 IEEE/LEOS Workshop on Fibres and Optical Passive Components, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WFOPC.2005.1462108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2005 IEEE/LEOS Workshop on Fibres and Optical Passive Components, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WFOPC.2005.1462108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Raman emission in porous silicon at 1.5 micron: a possible approach
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported. Finally, we discuss about the possibility to enhance the Raman gain coefficient and to eliminate two photon absorption in porous silicon.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
