T. Rodrigo-Rodriguez, E. Gutiérrez-D., R. Arturo-Sarmiento, S. Selberherr
{"title":"MOS器件仿真宏建模","authors":"T. Rodrigo-Rodriguez, E. Gutiérrez-D., R. Arturo-Sarmiento, S. Selberherr","doi":"10.1109/ICCDCS.2002.1004026","DOIUrl":null,"url":null,"abstract":"By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Macro-modeling for MOS device simulation\",\"authors\":\"T. Rodrigo-Rodriguez, E. Gutiérrez-D., R. Arturo-Sarmiento, S. Selberherr\",\"doi\":\"10.1109/ICCDCS.2002.1004026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
By making use of the MOS diode theory, the carrier, and current distribution, as well as the mobility in a MOS device is evaluated. Simple analytical expressions are used for parameters like mobility, carrier concentration, and transversal electric field. Agreement between experimental and simulated results from an LDD MOSFET and an n-well resistance is in agreement, probing this approach is suitable as a plug-in model tester for quick model evaluation.
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