一种高性能混合电压数字输出缓冲器

2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI:10.1109/SMICND.2018.8539840

A. Dragan, Andrei Enache, A. Negut, A. Tache, G. Brezeanu

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引用次数: 2

摘要

在0.18μm CMOS EEPROM工艺中设计并实现了数字推挽输出缓冲器。缓冲器充当内部低电压和外部高电平电压之间的接口。该电路可以在1.6V到5.6V的宽电压范围内工作，数据速率高达20mbps。这些性能是通过改变传统数字缓冲器的拓扑结构实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A High Performance Mixed-Voltage Digital Output Buffer

A digital push-pull output buffer is designed and implemented in a 0.18μm CMOS EEPROM process. The buffer acts as an interface between an internal low voltage and an external, higher level voltage. The circuit can operate in a wide range of power supply voltages, from 1.6V to 5.6V, at data rates of up to 20 Mbps. These performances were achieved through topology changes to a classic digital buffer.

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2018 International Semiconductor Conference (CAS)

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