Research of the polarization-optical parameters of a solid-state matrix photomultiplier

The work is devoted to the research of the polarization-optical parameters of a solid-state matrix photomultiplier. The main parameters of the performance of the SiPM form from the sensitivity of the photodetector. As an object of study, a silicon photomultiplier ARRAY-C 60035-4P was chosen, which consists of 4 photosensitive sites. The pixels of the SiPM are avalanche photodiodes that are separated from each other by elements that do not participate in the formation of the useful signal and serve to suppress the secondary optical signal due to the optical coupling between. In this paper, experimental studies of the state of polarization reflected from the surface of each of the active regions of the matrix of a silicon photomultiplier are performed using a laser photoelectric ellipsometer LEF-3F-1. The action of the ellipsometer is based on the zero method of determining the polarization angles. In the course of the experiment the contractions of ellipsometric angles were determined. The experiment was carried out at four angles of incidence on the surface of the receiver, which corresponds to a set of reflective characteristics of a silicon photoelectric multiplier. With the help of these data, the estimation of the distribution of the reflection and transmission coefficients becomes possible, as well as the sensitivity distribution over the different sites of the SiPM.