S. Z. Rahaman, S. Maikap, W. Chen, T. Tien, H. Y. Lee, F. Chen, M. Kao, M. Tsai
{"title":"优异的阻性开关记忆:氧化钨混合物中氧化钨的影响","authors":"S. Z. Rahaman, S. Maikap, W. Chen, T. Tien, H. Y. Lee, F. Chen, M. Kao, M. Tsai","doi":"10.1109/VLSI-TSA.2012.6210124","DOIUrl":null,"url":null,"abstract":"Influence of GeO<sub>x</sub> layer on resistive switching memory performance in a simple and CMOS compatible W/WO<sub>x</sub>/GeO<sub>x</sub>:WO<sub>x</sub> mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO<sub>x</sub>/W structure. An excellent read endurance and program/erase cycles of >;10<sup>6</sup> at large V<sub>read</sub> of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Excellent resistive switching memory: Influence of GeOx in WOx mixture\",\"authors\":\"S. Z. Rahaman, S. Maikap, W. Chen, T. Tien, H. Y. Lee, F. Chen, M. Kao, M. Tsai\",\"doi\":\"10.1109/VLSI-TSA.2012.6210124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Influence of GeO<sub>x</sub> layer on resistive switching memory performance in a simple and CMOS compatible W/WO<sub>x</sub>/GeO<sub>x</sub>:WO<sub>x</sub> mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO<sub>x</sub>/W structure. An excellent read endurance and program/erase cycles of >;10<sup>6</sup> at large V<sub>read</sub> of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Excellent resistive switching memory: Influence of GeOx in WOx mixture
Influence of GeOx layer on resistive switching memory performance in a simple and CMOS compatible W/WOx/GeOx:WOx mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WOx/W structure. An excellent read endurance and program/erase cycles of >;106 at large Vread of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.
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