{"title":"偏置和温度相关的三阶非线性GaAs DHBTs及其在热阻提取中的应用","authors":"A. Khan, A. Rezazadeh","doi":"10.1109/EMICC.2006.282763","DOIUrl":null,"url":null,"abstract":"The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bias and Temperature Dependant Third Order Nonlinearity of GaAs DHBTs and its use in Extracting Thermal Resistance\",\"authors\":\"A. Khan, A. Rezazadeh\",\"doi\":\"10.1109/EMICC.2006.282763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bias and Temperature Dependant Third Order Nonlinearity of GaAs DHBTs and its use in Extracting Thermal Resistance
The effect of various biasing conditions and temperature on third order two-tone intermodulation distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device
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