{"title":"使用电子-空穴系统的硅纳米器件","authors":"A. Fujiwara, Y. Takahashi","doi":"10.1109/WOLTE.2002.1022456","DOIUrl":null,"url":null,"abstract":"Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the'electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Si nano-devices using an electron-hole system\",\"authors\":\"A. Fujiwara, Y. Takahashi\",\"doi\":\"10.1109/WOLTE.2002.1022456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the'electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.\",\"PeriodicalId\":338080,\"journal\":{\"name\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2002.1022456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 5th European Workshop on Low Temperature Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2002.1022456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the'electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.
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