用于GSM应用的单电源高功率和高效率集成PHEMT放大器

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-10 DOI:10.1109/RFIC.2000.854426

C. Duvanaud, V. Serru, F. Robin, E. Leclerc

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引用次数: 12

摘要

提出的功率PHEMT技术允许在3.5伏的低漏极偏置和零伏的栅极偏置下实现高功率(35.5 dBm)和PAE(60%)。针对这种工况，分析了在信号谐波处调整负荷终止的方法。

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A single supply very high power and efficiency integrated PHEMT amplifier for GSM applications

The power PHEMT technology presented allows one to achieve high power (35.5 dBm) and PAE (60%) for a low drain bias of 3.5 volts and a gate bias of zero volts. For such operating conditions, analyses are conducted to adjust the load termination at the signal harmonics.

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来源期刊

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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