用于射频MEMS的未掺杂金刚石薄膜的电学特性

L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei
{"title":"用于射频MEMS的未掺杂金刚石薄膜的电学特性","authors":"L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei","doi":"10.1109/IRPS.2013.6532049","DOIUrl":null,"url":null,"abstract":"Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Electrical characterization of undoped diamond films for RF MEMS application\",\"authors\":\"L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei\",\"doi\":\"10.1109/IRPS.2013.6532049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532049\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

在MEMS应用中,金刚石薄膜被认为是优于Si3N4的介质。本文对未掺杂微晶金刚石薄膜的电学特性进行了详细的表征研究,包括在宽温度范围内的直流和充放电瞬态分析。该研究的目的是更好地了解MEMS电容开关在不同操作条件下电荷注入和收集过程的物理机制。
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Electrical characterization of undoped diamond films for RF MEMS application
Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.
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