{"title":"0.5 V,低功耗,1 MHz低通滤波器,0.18µm CMOS工艺","authors":"H. VasanthaM., T. Laxminidhi","doi":"10.1109/ISED.2012.46","DOIUrl":null,"url":null,"abstract":"In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achieve necessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common mode feedback(CMFB) circuit sets the output common mode voltage of transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%.","PeriodicalId":276803,"journal":{"name":"2012 International Symposium on Electronic System Design (ISED)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"0.5 V, Low Power, 1 MHz Low Pass Filter in 0.18 µm CMOS Process\",\"authors\":\"H. VasanthaM., T. Laxminidhi\",\"doi\":\"10.1109/ISED.2012.46\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achieve necessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common mode feedback(CMFB) circuit sets the output common mode voltage of transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%.\",\"PeriodicalId\":276803,\"journal\":{\"name\":\"2012 International Symposium on Electronic System Design (ISED)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Symposium on Electronic System Design (ISED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISED.2012.46\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Symposium on Electronic System Design (ISED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISED.2012.46","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.5 V, Low Power, 1 MHz Low Pass Filter in 0.18 µm CMOS Process
In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achieve necessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common mode feedback(CMFB) circuit sets the output common mode voltage of transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%.