SEU敏感深度的亚微米SRAM技术

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698994

C. Detcheverry, R. Ecoffet, S. Duzellier, E. Lorfèvre, G. Bruguier, J. Barak, Y. Lifshitz, J. Palau, J. Gasiot

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引用次数: 9

摘要

这项工作通过实验和模拟确定了0.6 /spl mu/m SRAM技术中SEU的敏感深度。在重离子沉积能量接近临界能量的情况下，两者之间有很好的相关性。其他模拟结果通过研究离子沉积高能量(在更大LET下)的最小敏感深度来完成第一次研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEU sensitive depth in a submicron SRAM technology

This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 /spl mu/m SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions deposing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions deposing higher energies (at greater LET).

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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