定制设计的180nm CMOS技术运算放大器的自动ASET灵敏度评估

A. Fontana, S. Pazos, F. Aguirre, F. Palumbo
{"title":"定制设计的180nm CMOS技术运算放大器的自动ASET灵敏度评估","authors":"A. Fontana, S. Pazos, F. Aguirre, F. Palumbo","doi":"10.1109/CAMTA.2017.8058136","DOIUrl":null,"url":null,"abstract":"This work presents a SPICE-based automatic SET sensitivity evaluation of a 180nm CMOS full-custom Operational Amplifier. The set-up uses the well known double exponential current law to inject SET into every sensitive node in the circuit hierarchy. The pulse parameters are obtained according to a previously generated population of particles with randomly assigned energies and species, the node bias condition at the instant of the strike and an empirical model obtained through TCAD simulations. The circuit is evaluated transistor-wise for each ion of the generated database and the output waveforms are processed in time and frequency domain to obtain figures of merit of the hardness of the proposed design on a given radioactive environment. Results allow to identify the most sensitive devices and the expected error rate for the projected application, allowing to conduct hardening techniques during early design stages.","PeriodicalId":383970,"journal":{"name":"2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier\",\"authors\":\"A. Fontana, S. Pazos, F. Aguirre, F. Palumbo\",\"doi\":\"10.1109/CAMTA.2017.8058136\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a SPICE-based automatic SET sensitivity evaluation of a 180nm CMOS full-custom Operational Amplifier. The set-up uses the well known double exponential current law to inject SET into every sensitive node in the circuit hierarchy. The pulse parameters are obtained according to a previously generated population of particles with randomly assigned energies and species, the node bias condition at the instant of the strike and an empirical model obtained through TCAD simulations. The circuit is evaluated transistor-wise for each ion of the generated database and the output waveforms are processed in time and frequency domain to obtain figures of merit of the hardness of the proposed design on a given radioactive environment. Results allow to identify the most sensitive devices and the expected error rate for the projected application, allowing to conduct hardening techniques during early design stages.\",\"PeriodicalId\":383970,\"journal\":{\"name\":\"2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAMTA.2017.8058136\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAMTA.2017.8058136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了一种基于spice的180nm CMOS全定制运算放大器的自动SET灵敏度评估方法。该装置采用了众所周知的双指数电流定律,将SET注入到电路层次中的每个敏感节点中。脉冲参数是根据预先生成的具有随机分配能量和种类的粒子群、撞击瞬间的节点偏置条件和通过TCAD模拟得到的经验模型得到的。对所生成的数据库中的每个离子进行晶体管评估,并对输出波形进行时域和频域处理,以在给定的放射性环境中获得所提出设计的硬度的优点数字。结果可以确定最敏感的设备和预期的错误率,允许在早期设计阶段进行强化技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier
This work presents a SPICE-based automatic SET sensitivity evaluation of a 180nm CMOS full-custom Operational Amplifier. The set-up uses the well known double exponential current law to inject SET into every sensitive node in the circuit hierarchy. The pulse parameters are obtained according to a previously generated population of particles with randomly assigned energies and species, the node bias condition at the instant of the strike and an empirical model obtained through TCAD simulations. The circuit is evaluated transistor-wise for each ion of the generated database and the output waveforms are processed in time and frequency domain to obtain figures of merit of the hardness of the proposed design on a given radioactive environment. Results allow to identify the most sensitive devices and the expected error rate for the projected application, allowing to conduct hardening techniques during early design stages.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge trapping effects on Metal-Gate/High-k/III-V MOS devices assessed through C-V hysteresis Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier Programmable PLL-based frequency synthesizer: Modeling and design considerations Setup and calibration of a particle detector based on charge coupled devices Design and characterization of a CMOS two-stage miller amplifier for ionizing radiation dosimetry
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1