灯丝电阻对电流超调持续时间的依赖性

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804158

P. Shrestha, D. Nminibapiel, J. Campbell, K. Cheung, H. Baumgart, S. Deora, G. Bersuker

{"title":"灯丝电阻对电流超调持续时间的依赖性","authors":"P. Shrestha, D. Nminibapiel, J. Campbell, K. Cheung, H. Baumgart, S. Deora, G. Bersuker","doi":"10.1109/IIRW.2013.6804158","DOIUrl":null,"url":null,"abstract":"The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Dependence of the filament resistance on the duration of current overshoot\",\"authors\":\"P. Shrestha, D. Nminibapiel, J. Campbell, K. Cheung, H. Baumgart, S. Deora, G. Bersuker\",\"doi\":\"10.1109/IIRW.2013.6804158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

HfO2 RRAM中导电灯丝的特性取决于在灯丝形成过程中可能发生的电流顺应超调的持续时间。除了超调幅度外，发现灯丝电阻还受到寄生电容引起的超调持续时间的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dependence of the filament resistance on the duration of current overshoot

The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.

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2013 IEEE International Integrated Reliability Workshop Final Report

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