{"title":"隧道窗形成过程中的工艺变化及其对FLOTOX EEPROM器件可靠性性能的影响","authors":"K. Lai, P. Lim, W. Chim, Yang Pan","doi":"10.1109/SMELEC.2000.932462","DOIUrl":null,"url":null,"abstract":"Process variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance tests. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or \"crabby\" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth.","PeriodicalId":359114,"journal":{"name":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices\",\"authors\":\"K. Lai, P. Lim, W. Chim, Yang Pan\",\"doi\":\"10.1109/SMELEC.2000.932462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Process variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance tests. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or \\\"crabby\\\" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth.\",\"PeriodicalId\":359114,\"journal\":{\"name\":\"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2000.932462\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2000.932462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices
Process variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance tests. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or "crabby" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth.
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