T. K. Woodward, R. A. Novotny, A. Lentine, L. Chirovsky, L. D’asaro, S. Hui, M. Focht, G. Guth, L. E. Smith, R. Leibenguth
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Recently, we have described the integration of active optical elements (multiple quantum well (MQW) modulators) together with FET-based GaAs electronicsreferred to as field-effect-transistor self-electro-optic effect device (FET-SEED) technology. [ 1 , 21 An important measure of the performance of this technology is provided by studies of ring oscillators. In addition, it provides an example of the type of novel circuits made possible by the provision of an integrated optical output. We describe here the first measurements of FET-SEED ring oscillators.
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