工艺参数对AFM纳米阳极氧化的影响

Y. Leng, Lianhe Dong, Yanjun Sun, Zhe Chen, Z. Ma
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引用次数: 0

摘要

结合压力传感器氧化绝缘纳米结构的制备,研究了偏置电压、环境温度和湿度对原子力显微镜阳极氧化纳米结构中氧化点尺寸的影响。实验结果表明,氧化点的尺寸随偏置电压和环境湿度的增大而增大,但过高的偏置电压和环境温度会导致氧化点表面出现阶梯现象;环境温度22℃,偏置电压8V,湿度50%,氧化时间8s是氧化制备n型Si(100)较为适宜的工艺参数。
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Influence of processing parameter on nanoscale anodic oxidation by AFM
Combining the pressure sensor's oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).
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