{"title":"等离子体CVD法制备TEOS SiO/ sub2 /薄膜的击穿特性","authors":"K. Ishii, T. Morita, D. Isshiki, Y. Ohki","doi":"10.1109/CEIDP.1993.378947","DOIUrl":null,"url":null,"abstract":"SiO/sub 2/ films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO/sub 2/ film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm/sup -1/ as a function of the deposition temperature, the effect of the deposition temperature on the contents of H/sub 2/O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K.<<ETX>>","PeriodicalId":149803,"journal":{"name":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Breakdown characteristics of thin SiO/sub 2/ films deposited from TEOS using plasma CVD method\",\"authors\":\"K. Ishii, T. Morita, D. Isshiki, Y. Ohki\",\"doi\":\"10.1109/CEIDP.1993.378947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiO/sub 2/ films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO/sub 2/ film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm/sup -1/ as a function of the deposition temperature, the effect of the deposition temperature on the contents of H/sub 2/O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K.<<ETX>>\",\"PeriodicalId\":149803,\"journal\":{\"name\":\"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEIDP.1993.378947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.1993.378947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Breakdown characteristics of thin SiO/sub 2/ films deposited from TEOS using plasma CVD method
SiO/sub 2/ films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO/sub 2/ film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm/sup -1/ as a function of the deposition temperature, the effect of the deposition temperature on the contents of H/sub 2/O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K.<>
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