{"title":"纳米柱晶体管中库仑阻塞诱导交流电的证据","authors":"T. Wang, Y. Wan","doi":"10.1109/EDSSC.2017.8126406","DOIUrl":null,"url":null,"abstract":"Study of electron transport in nanopillar transistor at 300K shows that elastic vibration is an intrinsic behavior of the device. The frequency observed in the drain-source current is found to agree with the charging frequency. Given a quantum dot of size 10×10×9nm3, the maximum displacement is estimated to be 0.3nm. Once the displacement diminishes to zero, single-electron tunnel becomes the dominating effect. A forced vibration model is proposed to explain the correlation between surface charges and vibrations. When the distribution of charges is uniformly on each SiNx atom, vibration becomes stable and can yield homogenous damping current.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evidence of coulomb blockade induced alternating current in nanopillar transistor\",\"authors\":\"T. Wang, Y. Wan\",\"doi\":\"10.1109/EDSSC.2017.8126406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Study of electron transport in nanopillar transistor at 300K shows that elastic vibration is an intrinsic behavior of the device. The frequency observed in the drain-source current is found to agree with the charging frequency. Given a quantum dot of size 10×10×9nm3, the maximum displacement is estimated to be 0.3nm. Once the displacement diminishes to zero, single-electron tunnel becomes the dominating effect. A forced vibration model is proposed to explain the correlation between surface charges and vibrations. When the distribution of charges is uniformly on each SiNx atom, vibration becomes stable and can yield homogenous damping current.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evidence of coulomb blockade induced alternating current in nanopillar transistor
Study of electron transport in nanopillar transistor at 300K shows that elastic vibration is an intrinsic behavior of the device. The frequency observed in the drain-source current is found to agree with the charging frequency. Given a quantum dot of size 10×10×9nm3, the maximum displacement is estimated to be 0.3nm. Once the displacement diminishes to zero, single-electron tunnel becomes the dominating effect. A forced vibration model is proposed to explain the correlation between surface charges and vibrations. When the distribution of charges is uniformly on each SiNx atom, vibration becomes stable and can yield homogenous damping current.
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