可生物降解丝素基记忆电阻器的晶片级制造

Geon Kook, Sohyeon Jeong, Mikyung Kim, Sungwoo Lee, Hyojung Kim, Nakwon Choi, Hyunjoon Lee
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引用次数: 1

摘要

柔性、生物相容性、可生物降解和小型电子元件的发展对植入式医疗器械具有极大的兴趣。在这项工作中,我们提出了一个高密度的丝素基忆阻器阵列,使用我们新开发的基于UV光刻的制造技术制造。这是首次在高细胞密度(单个细胞20 × 20 μm2,密度为105 cm−2)的交叉棒结构中实现基于丝素蛋白的忆阻器,该结构允许个体访问细胞。此外,我们在聚苯乙烯- c薄膜上实现了一种全柔性丝素基忆阻器阵列,并证明了其可靠的电阻开关和在酶溶液中的生物降解性。
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Wafer-scale fabrication of biodegradable silk-fibroin-based memristors
Development of flexible, biocompatible, biodegradable, and small electronic components is of great interest for implantable medical devices. In this work, we present a highly dense silk-fibroin-based memristor array, fabricated using our newly developed fabrication technique based on UV photolithography. This is the first demonstration of silk-fibroin-based memristors implemented in a cross-bar architecture with a high cell density (single cell of 20 × 20 μm2 and a density of 105 cm−2) which allows individual access to cells. In addition, we implement a fully flexible silk-fibroin-based memristor array fabricated on a Parylene-C film and demonstrate its reliable resistive switching and biodegradability in an enzymatic solution.
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