采用光电化学湿蚀刻和相位掩模干涉技术制备光子晶体发光二极管

Cheng-Hung Lin, Cheng-Yen Chen, Dong-Ming Yeh, C.C. Yang
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摘要

利用光电化学蚀刻技术,通过相位掩模干涉在InGaN/GaN量子阱发光二极管上形成光子晶体结构,证明了高光提取效率。输出功率提高90%以上。
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Photonic crystal light-emitting diode fabricated with photoelectrochemical wet etching and phase mask interference
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
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Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy Photonic devices for optical and wireless access integrated systems Commercialization of optoelectronic integrated circuits Optical performance monitoring for reconfigurable optical networks Recent progress in photonic crystals for manipulation of photons
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