{"title":"用于卫星通信的低噪声和线性场效应晶体管放大器","authors":"P. Mercer, D. Cowan, A. Bell","doi":"10.1109/MWSYM.1977.1124493","DOIUrl":null,"url":null,"abstract":"FET Amplifiers with ambient noise figures as low as 4.8 dB at 12 GHz, 35 dB gain and intercept points as high as +28 dBm have been developed for use in communications satellites. Predicted mean time to failure is in excess of 10/sup 6/ hours.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Low Noise and Linear FET Amplifiers for Satellite Communications\",\"authors\":\"P. Mercer, D. Cowan, A. Bell\",\"doi\":\"10.1109/MWSYM.1977.1124493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"FET Amplifiers with ambient noise figures as low as 4.8 dB at 12 GHz, 35 dB gain and intercept points as high as +28 dBm have been developed for use in communications satellites. Predicted mean time to failure is in excess of 10/sup 6/ hours.\",\"PeriodicalId\":299607,\"journal\":{\"name\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1977.1124493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Noise and Linear FET Amplifiers for Satellite Communications
FET Amplifiers with ambient noise figures as low as 4.8 dB at 12 GHz, 35 dB gain and intercept points as high as +28 dBm have been developed for use in communications satellites. Predicted mean time to failure is in excess of 10/sup 6/ hours.