{"title":"尖峰电场中雪崩倍增的温度依赖性","authors":"M.R. van den Berg, L. Nanver, J. Slotboom","doi":"10.1109/IEDM.2000.904263","DOIUrl":null,"url":null,"abstract":"The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Temperature dependence of avalanche multiplication in spiked electric fields\",\"authors\":\"M.R. van den Berg, L. Nanver, J. Slotboom\",\"doi\":\"10.1109/IEDM.2000.904263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.\",\"PeriodicalId\":276800,\"journal\":{\"name\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2000.904263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature dependence of avalanche multiplication in spiked electric fields
The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.
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