ZnO/Si heterojunction for low cost solar cell fabricated by chemical spray pyrolysis method

ZnO/Si heterojunction as being elaborated as candidate for solar cell with low cost. ZnO thin films were deposited on a p-Si semiconductor and a glass by chemical spray pyrolysis. ZnO thin film were analyzed using Uv–Vis spectroscopy to study the optical properties. The microstructure were investigated by X-ray diffraction (XRD), Raman scattering and SEM microscope. Electrical and photovoltaic parameters of ZnO/p-Si structure were determined by current–voltage (I–V) in dark and under the light. The results showed that the ZnO film has a strong c-axe orientation with good crystal quality with high transmittance (90 %) and large band gap about 3,4 eV. The device has a large rectifying property about 6.51 ideality factor and 103 $\Omega$ series resistance values. The maximum efficiency of ZnO/Si solar cell is 0.36 %. This low cost solar cell heterostructure fabricated by spray pyrolysis with its relative efficiency makes it an attractive alternative to the present procedure.