采用堆叠体偏置逆变器的34 mv启动环振荡器,用于极低压热电能量收集

Masaya Nishi, Kaori Matsumoto, N. Kuroki, M. Numa, Hikaru Sebe, R. Matsuzuka, O. Maida, D. Kanemoto, T. Hirose
{"title":"采用堆叠体偏置逆变器的34 mv启动环振荡器,用于极低压热电能量收集","authors":"Masaya Nishi, Kaori Matsumoto, N. Kuroki, M. Numa, Hikaru Sebe, R. Matsuzuka, O. Maida, D. Kanemoto, T. Hirose","doi":"10.1109/newcas49341.2020.9159838","DOIUrl":null,"url":null,"abstract":"A ring oscillator (ROSC) for extremely low-voltage thermoelectric energy generators is presented. The ROSC is composed of dedicated low-voltage stacked body bias inverters (SBBIs) that are based on the conventional self-bias inverter (SBI) and stacked inverter (SI). The proposed SBBI employs the advantages of both SBI and SI to oscillate at extremely low supply voltage $(V_{\\mathrm{D}\\mathrm{D}})$. The voltage gain $\\vert A_{\\mathrm{I}\\mathrm{N}\\mathrm{V}}\\vert$ of our proposed SBBI is improved and enhanced by controlling main inverter's supply $(V_{\\mathrm{D}\\mathrm{D}}$ and Gnd) and body-bias voltages, by using stacked and feedback inverters. Simulated results using a standard 0.18 $\\mu \\mathrm{m}$ CMOS process with deep N-well option showed that our proposed ROSC could oscillate at extremely low $V_{\\mathrm{D}\\mathrm{D}}$ of 34 mV and generate a clock pulse with a 88% voltage swing from an input $V_{\\mathrm{D}\\mathrm{D}}$ of 50 mV.","PeriodicalId":135163,"journal":{"name":"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 34-mV Startup Ring Oscillator Using Stacked Body Bias Inverters for Extremely Low-Voltage Thermoelectric Energy Harvesting\",\"authors\":\"Masaya Nishi, Kaori Matsumoto, N. Kuroki, M. Numa, Hikaru Sebe, R. Matsuzuka, O. Maida, D. Kanemoto, T. Hirose\",\"doi\":\"10.1109/newcas49341.2020.9159838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A ring oscillator (ROSC) for extremely low-voltage thermoelectric energy generators is presented. The ROSC is composed of dedicated low-voltage stacked body bias inverters (SBBIs) that are based on the conventional self-bias inverter (SBI) and stacked inverter (SI). The proposed SBBI employs the advantages of both SBI and SI to oscillate at extremely low supply voltage $(V_{\\\\mathrm{D}\\\\mathrm{D}})$. The voltage gain $\\\\vert A_{\\\\mathrm{I}\\\\mathrm{N}\\\\mathrm{V}}\\\\vert$ of our proposed SBBI is improved and enhanced by controlling main inverter's supply $(V_{\\\\mathrm{D}\\\\mathrm{D}}$ and Gnd) and body-bias voltages, by using stacked and feedback inverters. Simulated results using a standard 0.18 $\\\\mu \\\\mathrm{m}$ CMOS process with deep N-well option showed that our proposed ROSC could oscillate at extremely low $V_{\\\\mathrm{D}\\\\mathrm{D}}$ of 34 mV and generate a clock pulse with a 88% voltage swing from an input $V_{\\\\mathrm{D}\\\\mathrm{D}}$ of 50 mV.\",\"PeriodicalId\":135163,\"journal\":{\"name\":\"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/newcas49341.2020.9159838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/newcas49341.2020.9159838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

介绍了一种用于极低压热电发电机的环形振荡器(ROSC)。ROSC是在传统自偏置逆变器(SBI)和堆叠逆变器(SI)的基础上,由专用的低压堆叠体偏置逆变器(SBBIs)组成。所提出的SBBI利用SBI和SI的优点,在极低的电源电压$(V_{\ mathm {D}\ mathm {D}})$下振荡。本文提出的SBBI的电压增益$\vert A_{\ mathm {I}\ mathm {N}\ mathm {V}}\vert$通过使用堆叠式和反馈式逆变器控制主逆变器的电源$(V_{\ mathm {D}}$和Gnd)和体偏置电压来改进和增强。采用具有深n阱选项的标准0.18 $\mu \ mathm {m}$ CMOS工艺的仿真结果表明,我们提出的ROSC可以在34 mV的极低$V_{\ mathm {D}}$下振荡,并在输入$V_{\ mathm {D}}$ 50 mV时产生具有88%电压摆幅的时钟脉冲。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 34-mV Startup Ring Oscillator Using Stacked Body Bias Inverters for Extremely Low-Voltage Thermoelectric Energy Harvesting
A ring oscillator (ROSC) for extremely low-voltage thermoelectric energy generators is presented. The ROSC is composed of dedicated low-voltage stacked body bias inverters (SBBIs) that are based on the conventional self-bias inverter (SBI) and stacked inverter (SI). The proposed SBBI employs the advantages of both SBI and SI to oscillate at extremely low supply voltage $(V_{\mathrm{D}\mathrm{D}})$. The voltage gain $\vert A_{\mathrm{I}\mathrm{N}\mathrm{V}}\vert$ of our proposed SBBI is improved and enhanced by controlling main inverter's supply $(V_{\mathrm{D}\mathrm{D}}$ and Gnd) and body-bias voltages, by using stacked and feedback inverters. Simulated results using a standard 0.18 $\mu \mathrm{m}$ CMOS process with deep N-well option showed that our proposed ROSC could oscillate at extremely low $V_{\mathrm{D}\mathrm{D}}$ of 34 mV and generate a clock pulse with a 88% voltage swing from an input $V_{\mathrm{D}\mathrm{D}}$ of 50 mV.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Neural Networks for Epileptic Seizure Prediction: Algorithms and Hardware Implementation Cascaded tunable distributed amplifiers for serial optical links: Some design rules Motor Task Learning in Brain Computer Interfaces using Time-Dependent Regularized Common Spatial Patterns and Residual Networks Towards GaN500-based High Temperature ICs: Characterization and Modeling up to 600°C A Current Reference with high Robustness to Process and Supply Voltage Variations unaffected by Body Effect upon Threshold Voltage
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1