InGaN LEDs prepared on β-Ga2O3 (-201) substrates

We fabricated InGaN LEDs prepared on β-Ga2O3 (201) single-crystal substrates. The substrates were produced by using the edge-defined film-fed growth (EFG) method. A Si-doped GaN epitaxial layer was grown on an electrically conductive β-Ga2O3 (201) substrate by metal organic chemical vapor deposition (MOCVD). The full-width at half maximum (FWHM) of (0002) and (101 1) X-ray rocking curves (XRCs) of the Si-doped GaN layer were 220 arcsec and 223 arcsec, respectively. The dark spot density measured by cathode luminescence (CL) was approximately 1.5×108 cm-2. The crystalline quality was equal to that of GaN layer on sapphire. We fabricated a vertical LED in the p-side down configuration. The peak wavelength was approximately 450 nm. The p-contact metal area was 300 ×300 μm2. The light output power did not saturate at 1000 A/cm2. This device characteristic indicates the great potential of Ga2O3 for use in high-power LEDs.