L. Cooper, A. Webb, A. Gillooly, M. Hill, T. Read, P. Maton, J. Hankey, A. Bergonzo
We report on the rapid prototyping platform, developed at Fibercore, for producing spun multicore fiber (MCF) which maintains the high-specification and quality of a large-scale manufacturing process adding the versatility to fully customize fiber for specific applications. Such MCF has been produced by using an ultrasonic drill to accurately position the core holes in the cladding glass, achieving <0.4µm accuracy in fiber. Cross-talk between cores has been minimized by implementing high numerical aperture cores of 0.20, with levels less than -55dB over 400m. Additionally, the high level of germanium doping also allows fiber Bragg gratings (FBGs) to be written into each core without the need for hydrogen loading. Finally, in order to enable distinction between any potential twist and strain in the fiber from the bend under measurement, a permanent twist has been introduced in the fiber by spinning the preform whilst it is being drawn. The manufacturing cycle time for the fiber is 8 days, allowing rapid prototyping and repeat development cycles to be tested over a short period of time when creating new fiber designs.
{"title":"Design and performance of multicore fiber optimized towards communications and sensing applications","authors":"L. Cooper, A. Webb, A. Gillooly, M. Hill, T. Read, P. Maton, J. Hankey, A. Bergonzo","doi":"10.1117/12.2076950","DOIUrl":"https://doi.org/10.1117/12.2076950","url":null,"abstract":"We report on the rapid prototyping platform, developed at Fibercore, for producing spun multicore fiber (MCF) which maintains the high-specification and quality of a large-scale manufacturing process adding the versatility to fully customize fiber for specific applications. Such MCF has been produced by using an ultrasonic drill to accurately position the core holes in the cladding glass, achieving <0.4µm accuracy in fiber. Cross-talk between cores has been minimized by implementing high numerical aperture cores of 0.20, with levels less than -55dB over 400m. Additionally, the high level of germanium doping also allows fiber Bragg gratings (FBGs) to be written into each core without the need for hydrogen loading. Finally, in order to enable distinction between any potential twist and strain in the fiber from the bend under measurement, a permanent twist has been introduced in the fiber by spinning the preform whilst it is being drawn. The manufacturing cycle time for the fiber is 8 days, allowing rapid prototyping and repeat development cycles to be tested over a short period of time when creating new fiber designs.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130260389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Changren Qiu, Tianxin Yang, Dongfang Jia, Zhaoying Wang, Chunfeng Ge
We investigate gain equalization of a four-mode-group and six-mode-group erbium-doped fiber amplifiers with a genetic algorithm for mode division multiplexing transmission systems by optimizing rare earth dopant profile and pump modes powers, respectively. The optimizing gains are calculated to be > 28 dB between 1520 nm – 1565 nm with a maximum differential modal gain of ~ 2 dB among the mode groups only by optimizing the rare earth ring doping profile in the few-mode erbium-doped fiber.
{"title":"Gain equalization of FM-EDFA by optimizing ring doping and mode content of the pump with a genetic algorithm","authors":"Changren Qiu, Tianxin Yang, Dongfang Jia, Zhaoying Wang, Chunfeng Ge","doi":"10.1117/12.2078565","DOIUrl":"https://doi.org/10.1117/12.2078565","url":null,"abstract":"We investigate gain equalization of a four-mode-group and six-mode-group erbium-doped fiber amplifiers with a genetic algorithm for mode division multiplexing transmission systems by optimizing rare earth dopant profile and pump modes powers, respectively. The optimizing gains are calculated to be > 28 dB between 1520 nm – 1565 nm with a maximum differential modal gain of ~ 2 dB among the mode groups only by optimizing the rare earth ring doping profile in the few-mode erbium-doped fiber.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127076037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Light detection and ranging (lidar) is used for various applications such as remote sensing, altimetry and imaging. Continuous wave frequency modulated (CWFM) lidars rely on linearly ramping the optical frequency of a laser and interfering the delayed echo signal with a reference signal to produce a beat frequency. The range resolution of lidar is determined by the swept frequency range of the linearly chirped continuous light waves in a frequency modulation system. For example, for 1mm range resolution, it needs the frequency sweep range of more than 150 GHz. In this paper a system which can generate a linearly chirped optical waveform within a super broad-wide band of 200 GHz, using cascaded phase modulators (PM) and single side band (SSB) modulator, is designed as a light source in a high resolution lidar system.
{"title":"Novel method of generation of linear frequency modulation optical waveforms with swept range of over 200 GHz for lidar systems","authors":"Yuchen Zhang, Tianxin Yang, Tianhe Wang, Zhaoying Wang, Dongfang Jia, Chunfeng Ge","doi":"10.1117/12.2078205","DOIUrl":"https://doi.org/10.1117/12.2078205","url":null,"abstract":"Light detection and ranging (lidar) is used for various applications such as remote sensing, altimetry and imaging. Continuous wave frequency modulated (CWFM) lidars rely on linearly ramping the optical frequency of a laser and interfering the delayed echo signal with a reference signal to produce a beat frequency. The range resolution of lidar is determined by the swept frequency range of the linearly chirped continuous light waves in a frequency modulation system. For example, for 1mm range resolution, it needs the frequency sweep range of more than 150 GHz. In this paper a system which can generate a linearly chirped optical waveform within a super broad-wide band of 200 GHz, using cascaded phase modulators (PM) and single side band (SSB) modulator, is designed as a light source in a high resolution lidar system.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Colorectal cancer is the third most commonly diagnosed cancer in the world. The current standard of care for colorectal cancer is the conventional colonoscopy, which relies exclusively on the Physician’s experience. Continuous wave terahertz (THz) imaging has the potential to offer a safe, noninvasive medical imaging modality for detecting cancers. The current study demonstrates the design and development of a prototype terahertz endoscopic system based on flexible metal-coated terahertz waveguides. A CO2 pumped Far-Infrared molecular gas laser operating at 584 GHz frequency was used for illuminating the tissue, while the reflected signals were detected using liquid Helium cooled silicon bolometer. The continuous-wave terahertz imaging system utilizes a single waveguide channel to transmit the radiation and collect the back reflected intrinsic terahertz signal from the sample and is capable of operation in both transmission and reflection modalities. The two dimensional reflectance images obtained using a prototype terahertz endoscopic system showed intrinsic contrast between cancerous and normal regions of the colorectal tissue, thereby demonstrating the potential impact of terahertz imaging for in vivo cancer detection.
{"title":"Flexible waveguide enabled single-channel terahertz endoscopic system","authors":"P. Doradla, K. Alavi, C. Joseph, R. Giles","doi":"10.1117/12.2079417","DOIUrl":"https://doi.org/10.1117/12.2079417","url":null,"abstract":"Colorectal cancer is the third most commonly diagnosed cancer in the world. The current standard of care for colorectal cancer is the conventional colonoscopy, which relies exclusively on the Physician’s experience. Continuous wave terahertz (THz) imaging has the potential to offer a safe, noninvasive medical imaging modality for detecting cancers. The current study demonstrates the design and development of a prototype terahertz endoscopic system based on flexible metal-coated terahertz waveguides. A CO2 pumped Far-Infrared molecular gas laser operating at 584 GHz frequency was used for illuminating the tissue, while the reflected signals were detected using liquid Helium cooled silicon bolometer. The continuous-wave terahertz imaging system utilizes a single waveguide channel to transmit the radiation and collect the back reflected intrinsic terahertz signal from the sample and is capable of operation in both transmission and reflection modalities. The two dimensional reflectance images obtained using a prototype terahertz endoscopic system showed intrinsic contrast between cancerous and normal regions of the colorectal tissue, thereby demonstrating the potential impact of terahertz imaging for in vivo cancer detection.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131760208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Ren, Ya-Hsi Hwang, S. Pearton, E. Patrick, M. Law
Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.
{"title":"Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation","authors":"F. Ren, Ya-Hsi Hwang, S. Pearton, E. Patrick, M. Law","doi":"10.1117/12.2076676","DOIUrl":"https://doi.org/10.1117/12.2076676","url":null,"abstract":"Proton irradiation from the backside of the samples were employed to enhance off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates. Via holes were fabricated directly under the active area of the HEMTs by etching through the Si substrate for subsequent backside proton irradiation. By taking the advantage of the steep drop at the end of proton energy loss profile, the defects created by the proton irradiation from the backside of the sample could be precisely placed at specific locations inside the AlGaN/GaN HEMT structure. There were no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for the irradiated AlGaN/GaN HEMTs with the proton energy of 225 or 275 keV, for which the defects created by the proton irradiations were intentionally placed in the GaN buffer. HEMTs with defects placed in the 2 dimensional electron gas (2DEG) channel region and AlGaN barrier using 330 or 340 keV protons not only showed degradation of drain current, but also exhibited improvement of the off-state drain breakdown voltage. FLOODS TCAD finite-element simulations were performed to confirm the hypothesis of a virtual gate formed around the 2DEG region to reduce the peak electric field around the gate edges and increase the off-state drain breakdown voltage.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131869797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate is getting popular to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.
{"title":"Future and present technologies of solid state lighting (Presentation Video)","authors":"S. Nakamura","doi":"10.1117/12.2197203","DOIUrl":"https://doi.org/10.1117/12.2197203","url":null,"abstract":"Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate is getting popular to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132308380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Iizuka, Y. Morishima, A. Kuramata, Yu-Jiun Shen, C. Tsai, Ying-Yong Su, Gavin Liu, T. Hsu, J. Yeh
We fabricated InGaN LEDs prepared on β-Ga2O3 (201) single-crystal substrates. The substrates were produced by using the edge-defined film-fed growth (EFG) method. A Si-doped GaN epitaxial layer was grown on an electrically conductive β-Ga2O3 (201) substrate by metal organic chemical vapor deposition (MOCVD). The full-width at half maximum (FWHM) of (0002) and (101 1) X-ray rocking curves (XRCs) of the Si-doped GaN layer were 220 arcsec and 223 arcsec, respectively. The dark spot density measured by cathode luminescence (CL) was approximately 1.5×108 cm-2. The crystalline quality was equal to that of GaN layer on sapphire. We fabricated a vertical LED in the p-side down configuration. The peak wavelength was approximately 450 nm. The p-contact metal area was 300 ×300 μm2. The light output power did not saturate at 1000 A/cm2. This device characteristic indicates the great potential of Ga2O3 for use in high-power LEDs.
{"title":"InGaN LEDs prepared on β-Ga2O3 (-201) substrates","authors":"K. Iizuka, Y. Morishima, A. Kuramata, Yu-Jiun Shen, C. Tsai, Ying-Yong Su, Gavin Liu, T. Hsu, J. Yeh","doi":"10.1117/12.2076114","DOIUrl":"https://doi.org/10.1117/12.2076114","url":null,"abstract":"We fabricated InGaN LEDs prepared on β-Ga2O3 (201) single-crystal substrates. The substrates were produced by using the edge-defined film-fed growth (EFG) method. A Si-doped GaN epitaxial layer was grown on an electrically conductive β-Ga2O3 (201) substrate by metal organic chemical vapor deposition (MOCVD). The full-width at half maximum (FWHM) of (0002) and (101 1) X-ray rocking curves (XRCs) of the Si-doped GaN layer were 220 arcsec and 223 arcsec, respectively. The dark spot density measured by cathode luminescence (CL) was approximately 1.5×108 cm-2. The crystalline quality was equal to that of GaN layer on sapphire. We fabricated a vertical LED in the p-side down configuration. The peak wavelength was approximately 450 nm. The p-contact metal area was 300 ×300 μm2. The light output power did not saturate at 1000 A/cm2. This device characteristic indicates the great potential of Ga2O3 for use in high-power LEDs.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"30 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125854373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The IBM Silicon Nanophotonics technology enables cost-efficient optical links that connect racks, modules, and chips together with ultralow power single-die optical transceivers. I will give an overview of its historical development, technology differentiators, current status and a roadmap.
{"title":"Silicon integrated nanophotonics: from fundamental science to manufacturable technology (Presentation Video)","authors":"Y. Vlasov","doi":"10.1117/12.2197116","DOIUrl":"https://doi.org/10.1117/12.2197116","url":null,"abstract":"The IBM Silicon Nanophotonics technology enables cost-efficient optical links that connect racks, modules, and chips together with ultralow power single-die optical transceivers. I will give an overview of its historical development, technology differentiators, current status and a roadmap.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115106861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Baghsiahi, Kai Wang, R. Pitwon, David R. Selviah
The RMS surface roughness of an optical polymer waveguide end facet cut by a milling router and measured by AFM is investigated for a range of rotation speeds and translation speeds of the router. It was found that 1 flute (cutting edge) routers gave significantly less rough surfaces than 2 or 3 flute routers. The best results were achieved for a 1 flute router when the milling bit was inserted from the copper layer side of the board with a rotation speed of 15,000 rpm and a translation speed of 0.25 m/min which minimized the waveguide core end facet RMS roughness to 183 ± 8 nm and gave input optical coupling loss of 1.7 dB ± 0.5 dB and output optical coupling loss of 2.0 dB ± 0.7 dB. The relationship between optical coupling loss at the input and output of the waveguides and waveguide end facet roughness is also investigated in this paper. The ratio of RMS roughness to autocorrelation length of the roughness is shown to have a quantified linear relationship with experimental measurements of optical insertion loss, input optical coupling loss and output optical coupling loss. A new fabrication technique for cut waveguide end facet treatment has been proposed and demonstrated which reduces the insertion loss by 2.60 dB ± 1.3 dB which is more than that achieved by the closest available index matching fluid which gave 2.23 dB ± 1.2 dB and which is far more robust for use in commercial products.
{"title":"The relationship between polymer waveguide optical interconnection end facet roughness and the optical input and output coupling losses","authors":"H. Baghsiahi, Kai Wang, R. Pitwon, David R. Selviah","doi":"10.1117/12.2079571","DOIUrl":"https://doi.org/10.1117/12.2079571","url":null,"abstract":"The RMS surface roughness of an optical polymer waveguide end facet cut by a milling router and measured by AFM is investigated for a range of rotation speeds and translation speeds of the router. It was found that 1 flute (cutting edge) routers gave significantly less rough surfaces than 2 or 3 flute routers. The best results were achieved for a 1 flute router when the milling bit was inserted from the copper layer side of the board with a rotation speed of 15,000 rpm and a translation speed of 0.25 m/min which minimized the waveguide core end facet RMS roughness to 183 ± 8 nm and gave input optical coupling loss of 1.7 dB ± 0.5 dB and output optical coupling loss of 2.0 dB ± 0.7 dB. The relationship between optical coupling loss at the input and output of the waveguides and waveguide end facet roughness is also investigated in this paper. The ratio of RMS roughness to autocorrelation length of the roughness is shown to have a quantified linear relationship with experimental measurements of optical insertion loss, input optical coupling loss and output optical coupling loss. A new fabrication technique for cut waveguide end facet treatment has been proposed and demonstrated which reduces the insertion loss by 2.60 dB ± 1.3 dB which is more than that achieved by the closest available index matching fluid which gave 2.23 dB ± 1.2 dB and which is far more robust for use in commercial products.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134499855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. This capability is potentially useful for quality control in the semiconductor and photovoltaic industry. We shared subsequent experimental results revealing that terahertz interactions with both electrons and holes are strong enough to recognize both n- and p-type doping profile changes. We also displayed that the relatively long wavelength (~ 1 mm) of THz radiation allows this approach to be compatible with surface treatments like for instance the texturing (scattering layer) typically used in the solar industry. In this work we continuously demonstrate the accuracy with which current terahertz optical models can simulate the power spectrum of terahertz radiation transmitted through junctions with known doping profiles (as determined with SIMS). We conclude that current optical models predict the terahertz transmission and absorption in silicon junctions well.
{"title":"Accurate simulation of terahertz transmission through doped silicon junctions","authors":"C. Jen, C. Richter","doi":"10.1117/12.2077007","DOIUrl":"https://doi.org/10.1117/12.2077007","url":null,"abstract":"In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. This capability is potentially useful for quality control in the semiconductor and photovoltaic industry. We shared subsequent experimental results revealing that terahertz interactions with both electrons and holes are strong enough to recognize both n- and p-type doping profile changes. We also displayed that the relatively long wavelength (~ 1 mm) of THz radiation allows this approach to be compatible with surface treatments like for instance the texturing (scattering layer) typically used in the solar industry. In this work we continuously demonstrate the accuracy with which current terahertz optical models can simulate the power spectrum of terahertz radiation transmitted through junctions with known doping profiles (as determined with SIMS). We conclude that current optical models predict the terahertz transmission and absorption in silicon junctions well.","PeriodicalId":432115,"journal":{"name":"Photonics West - Optoelectronic Materials and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121752822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：