化学气相沉积法合成mn掺杂AlN纳米带

Wu Rong, Nanke Jiang, Li Jin, Hou Juan, Aiming Chang
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摘要

以Mn粉、Al粉和NH3为原料,采用无催化剂化学气相沉积(CVD)法原位掺杂Mn,在陶瓷衬底上生长Mn掺杂AlN纳米结构。采用x射线衍射(XRD)、x射线光发射光谱(XPS)、扫描电镜(SEM)、能量色散x射线光谱(EDX)和光致发光(PL)对产物的结构和形貌进行表征。结果表明,制备的AlN为纤锌矿结构,具有均匀的带状结构。纳米带卷曲且柔韧,长度可达10 μm,宽度为175 nm,厚度为25 nm,宽厚比为7。EDX和XPS表明Mn被成功地掺杂到AlN纳米带中。
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Synthesis of Mn-doped AlN nanobelts via chemical vapor deposition
Mn-doped AlN nanostructures were grown on ceramic substrate by in situ doping of Mn via a catalyst-free chemical vapor deposition (CVD) method using Mn powder, Al powder and NH3 as the starting materials. X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), scanning electron microscopy (SEM), Energy dispersive x-ray spectroscopy (EDX) and photoluminescence (PL) were employed to characterize the structure and morphology of the product. It was found that the as-prepared AlN product was wurtzite structure and had a ribbon shape with uniform geometry. The nanobelts were curled and flexible with length up to 10 μm, and the width-to-thickness ratio of these nanobelts was estimated to be 7 with 175 nm wide and 25 nm thick. EDX and XPS demonstrated that Mn was successfully doped into the AlN nanobelts.
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