{"title":"B2H6/氦自调节等离子体掺杂工艺降低finfet的侧壁电阻","authors":"Y. Sasaki","doi":"10.1109/IWJT.2010.5474972","DOIUrl":null,"url":null,"abstract":"The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"21 1-B 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping process\",\"authors\":\"Y. Sasaki\",\"doi\":\"10.1109/IWJT.2010.5474972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.\",\"PeriodicalId\":205070,\"journal\":{\"name\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"volume\":\"21 1-B 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2010.5474972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping process
The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.
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