基于10ghz MEMS的压控振荡器的性能

A. Coustou, D. Dubuc, K. Grenier, E. Fourn, O. Llopis, R. Plana
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引用次数: 6

摘要

本文研究了一种基于MEMS的10ghz电压控制振荡器(VCO)。作者报告说,与使用P+/Nwell变容器的MMIC技术相比,MEMS IC概念在10 GHz时的相位噪声提高了8 dB,输出功率提高了4 dB。测量结果表明,与MMIC技术相比,MEMS技术的谐振器质量因数有所提高。提出了一种考虑这些行为的新设计。新的基于MEMS的VCO正在建设中,它应该具有-87dBc/Hz @ 10 GHz偏移和4 dBm输出功率
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Capabilities of a 10 GHz MEMS based VCO
This paper report on the investigation of a MEMS based voltage controlled oscillator (VCO) at 10 GHz. The authors report that the MEMS IC concept turns out to a 8 dB phase noise improvement and 4 dB output power improvement at 10 GHz, compared to the MMIC technology using P+/Nwell varactors. Measurements have shown an improvement of resonator's quality factor of MEMS technology compared to MMIC technology. It is proposed a new design that takes into account these behaviors. The new MEMS based VCO is under construction and it should feature -87dBc/Hz @ 10 GHz offset with 4 dBm output power
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