Takuto Shirai, Xu Han, T. Ishizaki, Koki Tsushima, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura
{"title":"在InP/Si衬底上生长具有应变补偿层的双帽InAs量子点","authors":"Takuto Shirai, Xu Han, T. Ishizaki, Koki Tsushima, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura","doi":"10.1109/OECC48412.2020.9273520","DOIUrl":null,"url":null,"abstract":"We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.","PeriodicalId":433309,"journal":{"name":"2020 Opto-Electronics and Communications Conference (OECC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate\",\"authors\":\"Takuto Shirai, Xu Han, T. Ishizaki, Koki Tsushima, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura\",\"doi\":\"10.1109/OECC48412.2020.9273520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.\",\"PeriodicalId\":433309,\"journal\":{\"name\":\"2020 Opto-Electronics and Communications Conference (OECC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Opto-Electronics and Communications Conference (OECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OECC48412.2020.9273520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Opto-Electronics and Communications Conference (OECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OECC48412.2020.9273520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate
We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
