Flash氧化物可扩展性模型及程序/擦除方法的影响

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI:10.1109/IRWS.2006.305214

A. Haggag, P. Kuhn, P. Ingersoll, Chi-Nan Li, T. Harp, A. Hoefler, D. Burnett, K. Baker, Ko-Min Chang

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引用次数: 6

摘要

我们讨论了在高性能(快速程序/擦除时间)和高可靠性(数据保留)约束下的各种程序/擦除方法的闪存氧化物可扩展性模型。我们表明，与其他常见方法相比，使用FN通道擦除(HCI/CE)的HCI编程提供了最佳的可扩展性解决方案，使用FN边缘擦除(HCI/EE)和统一通道FN程序擦除(UCPE)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Flash Oxide Scalability Model and Impact of Program/Erase Method

We discuss flash oxide scalability model of various program/erase methods within the constraint of high performance (fast program/erase times) and high reliability (data retention). We show that HCI programming with FN channel erase (HCI/CE) offers the best scalable solution compared to other common methods, HCI programming with FN edge erase (HCI/EE) and uniform channel FN program erase (UCPE)

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2006 IEEE International Integrated Reliability Workshop Final Report

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