一种新型混合SOI LDMOS-IGBT功率晶体管

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496434

J. Zeng, P. Mawby, M. Towers, K. Board

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引用次数: 6

摘要

报道了一种基于SOI薄膜的新型LDMOS-IGBT杂化结构。该器件集成了SOI技术、IGBT的电导率调制和DMOSFET的高开关速度的优点。

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A new hybrid SOI LDMOS-IGBT power transistor

A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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