{"title":"采用自适应线路替换的混合高速缓存架构的高耐久性和高性能设计","authors":"A. Jadidi, M. Arjomand, H. Sarbazi-Azad","doi":"10.1109/ISLPED.2011.5993611","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a run-time strategy for managing writes onto last level cache in chip multiprocessors where STT-RAM memory is used as baseline technology. To this end, we assume that each cache set is decomposed into limited SRAM lines and large number of STT-RAM lines. SRAM lines are target of frequently-written data and rarely-written or read-only ones are pushed into STT-RAM. As a novel contribution, a low-overhead, fully-hardware technique is utilized to detect write-intensive data blocks of working set and place them into SRAM lines while the remaining data blocks are candidates to be remapped onto STT-RAM blocks during system operation. Therefore, the achieved cache architecture has large capacity and consumes near zero leakage energy using STT-RAM array; while dynamic write energy, acceptable write latency, and long lifetime is guaranteed via SRAM array. Results of full-system simulation for a quad-core CMP running PARSEC-2 benchmark suit confirm an average of 49 times improvement in cache lifetime and more than 50% reduction in cache power consumption when compared to baseline configurations.","PeriodicalId":117694,"journal":{"name":"IEEE/ACM International Symposium on Low Power Electronics and Design","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"94","resultStr":"{\"title\":\"High-endurance and performance-efficient design of hybrid cache architectures through adaptive line replacement\",\"authors\":\"A. Jadidi, M. Arjomand, H. Sarbazi-Azad\",\"doi\":\"10.1109/ISLPED.2011.5993611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a run-time strategy for managing writes onto last level cache in chip multiprocessors where STT-RAM memory is used as baseline technology. To this end, we assume that each cache set is decomposed into limited SRAM lines and large number of STT-RAM lines. SRAM lines are target of frequently-written data and rarely-written or read-only ones are pushed into STT-RAM. As a novel contribution, a low-overhead, fully-hardware technique is utilized to detect write-intensive data blocks of working set and place them into SRAM lines while the remaining data blocks are candidates to be remapped onto STT-RAM blocks during system operation. Therefore, the achieved cache architecture has large capacity and consumes near zero leakage energy using STT-RAM array; while dynamic write energy, acceptable write latency, and long lifetime is guaranteed via SRAM array. Results of full-system simulation for a quad-core CMP running PARSEC-2 benchmark suit confirm an average of 49 times improvement in cache lifetime and more than 50% reduction in cache power consumption when compared to baseline configurations.\",\"PeriodicalId\":117694,\"journal\":{\"name\":\"IEEE/ACM International Symposium on Low Power Electronics and Design\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"94\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/ACM International Symposium on Low Power Electronics and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLPED.2011.5993611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/ACM International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLPED.2011.5993611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-endurance and performance-efficient design of hybrid cache architectures through adaptive line replacement
In this paper, we propose a run-time strategy for managing writes onto last level cache in chip multiprocessors where STT-RAM memory is used as baseline technology. To this end, we assume that each cache set is decomposed into limited SRAM lines and large number of STT-RAM lines. SRAM lines are target of frequently-written data and rarely-written or read-only ones are pushed into STT-RAM. As a novel contribution, a low-overhead, fully-hardware technique is utilized to detect write-intensive data blocks of working set and place them into SRAM lines while the remaining data blocks are candidates to be remapped onto STT-RAM blocks during system operation. Therefore, the achieved cache architecture has large capacity and consumes near zero leakage energy using STT-RAM array; while dynamic write energy, acceptable write latency, and long lifetime is guaranteed via SRAM array. Results of full-system simulation for a quad-core CMP running PARSEC-2 benchmark suit confirm an average of 49 times improvement in cache lifetime and more than 50% reduction in cache power consumption when compared to baseline configurations.