TriQuint半导体晶圆生产线良率改善

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI:10.1109/GAAS.1994.636943

T.M. Smith

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引用次数: 1

摘要

本文介绍了TriQuint在离子注入、嵌入式栅极、MESFET IC工艺方面的良率改进努力和成果。它讨论了我们是如何提高晶圆生产线良率的，所使用的技术，一些经验教训，以及从1989年到现在取得的成果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wafer fab line yield improvement at TriQuint semiconductor

This paper describes TriQuint's yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned, and the results achieved from 1989 to present.

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Proceedings of 1994 IEEE GaAs IC Symposium

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