{"title":"基于遗传算法的二极管模型参数提取","authors":"B. Almashary","doi":"10.1109/ICEEC.2004.1374526","DOIUrl":null,"url":null,"abstract":"In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model parameters. Saturation current, ideality factor, and series resistance are extracted without a need for initial conditions. The proposed technique is found to be robust and capable to reach a solution that is characterized to be global and accurate. Compared with existing conventional techniques, the proposed one shows superior performance in terms of accuracy and being generic and applicable to extract parameters of other devices. The proposed technique performance has been tested using theoretical data, and used to extract real device parameters from its measured I-V characteristics.","PeriodicalId":180043,"journal":{"name":"International Conference on Electrical, Electronic and Computer Engineering, 2004. ICEEC '04.","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Genetic algorithm based diode model prameters extraction\",\"authors\":\"B. Almashary\",\"doi\":\"10.1109/ICEEC.2004.1374526\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model parameters. Saturation current, ideality factor, and series resistance are extracted without a need for initial conditions. The proposed technique is found to be robust and capable to reach a solution that is characterized to be global and accurate. Compared with existing conventional techniques, the proposed one shows superior performance in terms of accuracy and being generic and applicable to extract parameters of other devices. The proposed technique performance has been tested using theoretical data, and used to extract real device parameters from its measured I-V characteristics.\",\"PeriodicalId\":180043,\"journal\":{\"name\":\"International Conference on Electrical, Electronic and Computer Engineering, 2004. ICEEC '04.\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Electrical, Electronic and Computer Engineering, 2004. ICEEC '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEEC.2004.1374526\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Electrical, Electronic and Computer Engineering, 2004. ICEEC '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEEC.2004.1374526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Genetic algorithm based diode model prameters extraction
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model parameters. Saturation current, ideality factor, and series resistance are extracted without a need for initial conditions. The proposed technique is found to be robust and capable to reach a solution that is characterized to be global and accurate. Compared with existing conventional techniques, the proposed one shows superior performance in terms of accuracy and being generic and applicable to extract parameters of other devices. The proposed technique performance has been tested using theoretical data, and used to extract real device parameters from its measured I-V characteristics.