高压开关电容DC-DC变换器的一种新的开关方案

F. Vanselow, Prajith Kumar Poongodan, Oleg Sakolski, L. Maurer
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引用次数: 1

摘要

本文提出了一种用于高压开关电容DC-DC变换器的双开关自举(DSB)方案。该电路使电荷泵输入电压大于开关的栅极氧化物击穿电压。DSB方案在两个高压线性电荷泵中实现,正负输出电压分别为72V和-36V,最大输入电压为9V,负载电流为300µa,在2.2 MHz开关频率下效率为34.8%。实验测试芯片采用高压0.18µm SOI技术在6.54 mm2内实现。
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A New Switching Scheme For High-Voltage Switched Capacitor DC-DC Converter
In this paper a new double switch bootstrapping (DSB) scheme for high voltage switched capacitor DC-DC converter is presented. The circuit enables charge pump input voltages greater than the gate-oxide breakdown voltage for the switches. The DSB scheme is implemented in two high-voltage linear charge-pumps for positive and negative output voltages of up 72V and down to -36V, a maximum input voltage of 9V, a load current of 300µA for an efficiency of 34.8% at 2.2 MHz switching frequency. The experimental testchip is realized using a high-voltage 0.18µm SOI technology in 6.54 mm2.
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