半绝缘衬底深电平补偿Gaas介面效应的简化仿真

{"title":"半绝缘衬底深电平补偿Gaas介面效应的简化仿真","authors":"K. Horio, Y. Fuseya, H. Kusuki, H. Yanai","doi":"10.1109/NUPAD.1990.748267","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Simplified Simulation Of Gaas Mesfets With Semi-insulating Substrates Compensated By Deep Levels\",\"authors\":\"K. Horio, Y. Fuseya, H. Kusuki, H. Yanai\",\"doi\":\"10.1109/NUPAD.1990.748267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":348970,\"journal\":{\"name\":\"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUPAD.1990.748267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUPAD.1990.748267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}