小间距SnBi共晶凸点互连中的电迁移行为

IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI:10.1109/ICSJ.2014.7009612

K. Murayama, Mitsuhiro Aizawa, T. Kurihara

{"title":"小间距SnBi共晶凸点互连中的电迁移行为","authors":"K. Murayama, Mitsuhiro Aizawa, T. Kurihara","doi":"10.1109/ICSJ.2014.7009612","DOIUrl":null,"url":null,"abstract":"Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections\",\"authors\":\"K. Murayama, Mitsuhiro Aizawa, T. Kurihara\",\"doi\":\"10.1109/ICSJ.2014.7009612\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).\",\"PeriodicalId\":362502,\"journal\":{\"name\":\"IEEE CPMT Symposium Japan 2014\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE CPMT Symposium Japan 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSJ.2014.7009612\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE CPMT Symposium Japan 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2014.7009612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

研究了小间距SnBi共晶凸点互连中的电迁移行为。在小间距SnBi共晶焊料凹凸(直径)的情况下。直径为25 μ m时，最大阻力增幅显著小于直径为75 μ m时的最大阻力增幅。

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Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections

Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).

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IEEE CPMT Symposium Japan 2014

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