{"title":"基于隧道磁阻效应的模拟存储单元","authors":"A. Kostrov, V. Stempitsky","doi":"10.1109/CRMICO.2010.5632956","DOIUrl":null,"url":null,"abstract":"The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation memory cell based on tunnel magnetoresistance effect\",\"authors\":\"A. Kostrov, V. Stempitsky\",\"doi\":\"10.1109/CRMICO.2010.5632956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.\",\"PeriodicalId\":237662,\"journal\":{\"name\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2010.5632956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation memory cell based on tunnel magnetoresistance effect
The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.
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