BSIM3v3 key parameter extractions for efficient circuit designs

At present, most CMOS technologies are based on the use of BSIM3v3 MOSFET model, which has been intensively developed to meet the requirements for optimum accuracy. This results in a very accurate and complex MOSFET model, which affects designers, especially when performing hand calculations during the analysis and synthesis process. This paper presents an essential concept of BSIM3v3 key parameter extraction for efficient CMOS circuit design. Key parameter extractions from various CMOS SPICE parameter files are presented. Design examples on HSPICE are given to demonstrate the performance of the methodology.