Fe-和共掺杂TiO/sub -/spl δ //薄膜的稀释铁磁性能

K. Kim, Young Ran Park, C. Kim, G. Ahn, J. Park
{"title":"Fe-和共掺杂TiO/sub -/spl δ //薄膜的稀释铁磁性能","authors":"K. Kim, Young Ran Park, C. Kim, G. Ahn, J. Park","doi":"10.1109/INTMAG.2005.1463566","DOIUrl":null,"url":null,"abstract":"Magnetic and electronic properties of Fe- and Co-doped TiO/sub 2-/spl delta// thin films are investigated by vibrating sample magnetometer (VSM), Mossbauer spectroscopy, and X-ray photoelectron spectroscopy (XPS). When the precursor films are annealed in vacuum, the resulting oxygen-deficient TiO/sub 2-/spl delta//:Fe and TiO/sub 2-/spl delta//:Co films are found to become semiconducting with p-type carriers in the 10/sup 18/ cm/sup -3/ range. The oxygen-deficient films go through conductivity transitions from n-type to p-type by Fe and Co doping. Results of VSM measurements show that ferromagnetism is exhibited at room temperature. XPS measurements on the thin films reveal that Fe ions have both Fe/sup 2+/ and Fe/sup 3+/ ionic valences while Co ions have Co/sup 2+/ mostly. Also, the density of Fe/sup 2+/ ions is found to decrease after annealing.","PeriodicalId":273174,"journal":{"name":"INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diluted ferromagnetic properties in Fe- and Co-doped TiO/sub 2-/spl delta// thin films\",\"authors\":\"K. Kim, Young Ran Park, C. Kim, G. Ahn, J. Park\",\"doi\":\"10.1109/INTMAG.2005.1463566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Magnetic and electronic properties of Fe- and Co-doped TiO/sub 2-/spl delta// thin films are investigated by vibrating sample magnetometer (VSM), Mossbauer spectroscopy, and X-ray photoelectron spectroscopy (XPS). When the precursor films are annealed in vacuum, the resulting oxygen-deficient TiO/sub 2-/spl delta//:Fe and TiO/sub 2-/spl delta//:Co films are found to become semiconducting with p-type carriers in the 10/sup 18/ cm/sup -3/ range. The oxygen-deficient films go through conductivity transitions from n-type to p-type by Fe and Co doping. Results of VSM measurements show that ferromagnetism is exhibited at room temperature. XPS measurements on the thin films reveal that Fe ions have both Fe/sup 2+/ and Fe/sup 3+/ ionic valences while Co ions have Co/sup 2+/ mostly. Also, the density of Fe/sup 2+/ ions is found to decrease after annealing.\",\"PeriodicalId\":273174,\"journal\":{\"name\":\"INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTMAG.2005.1463566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.2005.1463566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

利用振动样品磁强计(VSM)、穆斯堡尔能谱(Mossbauer)和x射线光电子能谱(XPS)研究了Fe和共掺杂TiO/sub -/spl δ //薄膜的磁性和电子性能。当前驱体膜在真空中退火时,得到的缺氧TiO/sub 2-/spl delta//:Fe和TiO/sub 2-/spl delta//:Co薄膜在10/sup 18/ cm/sup -3/范围内具有半导体性质。Fe和Co的掺杂使贫氧膜的电导率从n型转变为p型。VSM测量结果表明,该材料在室温下呈现铁磁性。薄膜上的XPS测量表明,Fe离子同时具有Fe/sup 2+/和Fe/sup 3+/离子价,而Co离子主要具有Co/sup 2+/离子价。退火后Fe/sup 2+/离子密度降低。
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Diluted ferromagnetic properties in Fe- and Co-doped TiO/sub 2-/spl delta// thin films
Magnetic and electronic properties of Fe- and Co-doped TiO/sub 2-/spl delta// thin films are investigated by vibrating sample magnetometer (VSM), Mossbauer spectroscopy, and X-ray photoelectron spectroscopy (XPS). When the precursor films are annealed in vacuum, the resulting oxygen-deficient TiO/sub 2-/spl delta//:Fe and TiO/sub 2-/spl delta//:Co films are found to become semiconducting with p-type carriers in the 10/sup 18/ cm/sup -3/ range. The oxygen-deficient films go through conductivity transitions from n-type to p-type by Fe and Co doping. Results of VSM measurements show that ferromagnetism is exhibited at room temperature. XPS measurements on the thin films reveal that Fe ions have both Fe/sup 2+/ and Fe/sup 3+/ ionic valences while Co ions have Co/sup 2+/ mostly. Also, the density of Fe/sup 2+/ ions is found to decrease after annealing.
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