基于砷化镓的三分支纳米线结非线性特性的表面依赖性

Masaki Sato, Xiang Yin, S. Kasai
{"title":"基于砷化镓的三分支纳米线结非线性特性的表面依赖性","authors":"Masaki Sato, Xiang Yin, S. Kasai","doi":"10.1109/INEC.2014.7460446","DOIUrl":null,"url":null,"abstract":"Surface dependence of the nonlinear voltage transfer characteristic in the GaAs-based three-branch nanowire junction (TBJ) is investigated both theoretically and experimentally. A simple model considering the surface-potential-dependent carrier density in the channel reveals a clear relationship between the surface potential and the curvature of the bell-shaped transfer curve. Based on this model, we analyze the behavior of the TBJ with a local conductance modulation by focused light irradiation.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface dependence of nonlinear characteristic in GaAs-based three-branch nanowire junctions\",\"authors\":\"Masaki Sato, Xiang Yin, S. Kasai\",\"doi\":\"10.1109/INEC.2014.7460446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface dependence of the nonlinear voltage transfer characteristic in the GaAs-based three-branch nanowire junction (TBJ) is investigated both theoretically and experimentally. A simple model considering the surface-potential-dependent carrier density in the channel reveals a clear relationship between the surface potential and the curvature of the bell-shaped transfer curve. Based on this model, we analyze the behavior of the TBJ with a local conductance modulation by focused light irradiation.\",\"PeriodicalId\":188668,\"journal\":{\"name\":\"2014 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2014.7460446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2014.7460446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

从理论和实验两方面研究了gaas基三支路纳米线结(TBJ)中非线性电压转移特性的表面依赖性。考虑通道中表面电位依赖的载流子密度的简单模型揭示了表面电位与钟形传递曲线曲率之间的明确关系。基于该模型,我们分析了聚焦光局部电导调制下TBJ的行为。
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Surface dependence of nonlinear characteristic in GaAs-based three-branch nanowire junctions
Surface dependence of the nonlinear voltage transfer characteristic in the GaAs-based three-branch nanowire junction (TBJ) is investigated both theoretically and experimentally. A simple model considering the surface-potential-dependent carrier density in the channel reveals a clear relationship between the surface potential and the curvature of the bell-shaped transfer curve. Based on this model, we analyze the behavior of the TBJ with a local conductance modulation by focused light irradiation.
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