gaas/ alggaas量子阱中浅层受体的远红外研究

A. A. Reeder, B. McCombe, F. Chambers, G. Devane
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引用次数: 0

摘要

利用远红外透射光谱研究了掺杂在GaAs/AlGaAs量子阱和体GaAs中心的铍受体。从红外测量推断出28.5meV的结合能,与光致发光测量一致。当井宽从200Å减小到100Å时,主要过渡的频率逐渐变高,约束效应明显。在4.2 - 30K温度范围内,对本体样品和200Å井宽样品在0 - 9.0T范围内观察到的转变的磁场依赖性进行了研究。对于受限受体,跃迁随磁场的位移比最近的计算预测的要小得多。
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A far infrared study of shallow acceptors in gaas/algaas quantum wells
Far infrared transmission has been used to study beryllium acceptors doped in the center of GaAs/AlGaAs quantum wells and bulk GaAs. From the infrared measurements a binding energy of 28.5meV was inferred, in agreement with photoluminescence measurements. The effects of confinement are evident in shifts to progressively higher frequencies of the dominant transitions as the well width is decreased from 200Å to 100Å. The magnetic field dependence of the observed transitions has been investigated between 0 and 9.0T at temperatures between 4.2 and 30K for the bulk sample and 200Å well width sample. The shifts of the transitions with magnetic field are much smaller than predicted by recent calculations for confined acceptors.
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