矩阵x射线砷化镓探测器产生时机的研究

2009 International Siberian Conference on Control and Communications Pub Date : 2009-03-27 DOI:10.1109/SIBCON.2009.5044853

D. Prokopyev, M. Lelekov, A. Duchko, A. Y. Yushenko

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摘要

对嵌入电子器件的矩阵x射线砷化镓探测器的产生时机进行了初步的说明和实验。结果表明，该探测器的电荷收集效率将高于硒原型。同时发现，检测器的沟道电阻可以超过1000戈姆，存储电容和晶体管的闭合沟道电阻可以超过100戈姆，这是电路正常工作所必需的和足够的。

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Research of the creation opportunity of matrix X-ray gallium arsenide detector

Preliminary accounts and experiments for clarification of the creation opportunity of matrix X-ray gallium arsenide detector with embed electronics were made. It is revealed, that efficiency of charge collection in this detector will be higher than the selenium prototype. Also it is revealed, that detector channel resistance can exceed 1000 GOhm, and storage capacitor and transistor closed channel resistance can be made higher than 100 GOhm that is essential and sufficient for proper circuit work.

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2009 International Siberian Conference on Control and Communications

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