{"title":"磷从PSG到玻璃钝化表面的迁移动力学","authors":"G. Digiacomo","doi":"10.1109/IRPS.1984.362050","DOIUrl":null,"url":null,"abstract":"The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Phosphorus Migration Kinetics from PSG to Glass Passivation Surface\",\"authors\":\"G. Digiacomo\",\"doi\":\"10.1109/IRPS.1984.362050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362050\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Phosphorus Migration Kinetics from PSG to Glass Passivation Surface
The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.